Vishay high power products, Half bridge" igbt mtp (ultrafast npt igbt), 80 a – C&H Technology 40MT120UHTAPbF User Manual
Page 5
www.vishay.com
For technical questions, contact:
Document Number: 94507
4
Revision: 01-Mar-10
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
≤ 150 °C
Fig. 4 - Reverse BIAS SOA
T
J
= 150 °C; V
GE
= 15 V
Fig. 5 - Typical IGBT Output Characteristics
T
J
= - 40 °C; t
p
= 80 μs
Fig. 6 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 80 μs
0
20
40
60
80
100 120 140 160
TC (°C)
0
20
40
60
80
100
I C
(A
)
0
20
40
60
80
100 120 140 160
TC (°C)
0
100
200
300
400
500
600
P
D
(W
)
1
10
100
1000
10000
VCE (V)
0.01
0.1
1
10
100
1000
I C
(A
)
10 μs
100 μs
10ms
DC
10
100
1000
10 000
VCE (V)
1
10
100
1000
I C
(A
)
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
120
140
160
I C
E
(A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
120
140
160
I C
E
(A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V