C&H Technology CM400HG-66H - Manual (Page 5)

Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT
( A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT
( A
)
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
EMITTER-COLLECTOR VOLTAGE
( V
)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
( V
)
500
600
700
800
400
300
200
100
0
3 4 2 1 0 5 6
500
600
700
800
400
300
200
100
0
6 8 4 2 0 10 12
6
5
4
3
2
0
200 400 0 600 800
1
6
5
4
3
2
0
200 400 0 600 800
1
T j = 25
°
C
T j = 125 ° C
T j = 25 ° C
T j = 125
°
C
T j = 25 ° C
T j = 125
°
C
V CE = 20V T j = 125 ° C
V GE = 10V
V GE = 8V
V GE = 12V
V GE = 20V
V GE = 15V
V GE = 15V