C&H Technology CM200HG-130H - Manual (Page 4)

CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3 8/05
Static Electrical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current* I
CES
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C – – 3.0 mA
V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C – 10 30.0 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 20mA, V
CE
= 10V 5.0 6.0 7.0 Volts
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5 µA
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 200A, V
GE
= 15V, T
j
= 25°C – 5.1 – Volts
I
C
= 200A, V
GE
= 15V, T
j
= 125°C – 5.0 – Volts
Input Capacitance C
ies
V
CE
= 10V, V
GE
= 0V, – 41.0 – nF
Output Capacitance C
oes
f = 100kHz, – 2.5 – nF
Reverse Transfer Capacitance C
res
T
j
= 25°C – 0.7 – nF
Total Gate Charge Q
G
V
CC
= 3600V, I
C
= 200A, V
GE
= 15V – 3.3 – µC
Emitter-Collector Voltage** V
EC
I
E
= 200A, V
GE
= 0V, T
j
= 25°C – 4.0 – Volts
I
E
= 200A, V
GE
= 0V, T
j
= 125°C – 3.6 – Volts
Turn-On Delay Time t
d(on)
V
CC
= 3600V, I
C
= 200A, – 1.2 – µs
Turn-On Rise Time t
r
V
GE1
= -V
GE2
= 15V, R
G(on)
= 30Ω, – 0.35 – µs
Turn-On Switching Energy E
on
T
j
= 125°C, t
off
= 60µs, Inductive Load – 1.5 – J/P
Turn-Off Delay Time t
d(off)
V
CC
= 3600V, I
C
= 200A, – 6.6 – µs
Turn-Off Fall Time 1 t
f1
V
GE1
= -V
GE2
= 15V, – 0.5 – µs
Turn-Off Fall Time 2 t
f2
R
G(off)
= 72Ω, – 3.3 – µs
Turn-Off Switching Energy E
off
T
j
= 125°C, t
off
= 60µs, Inductive Load – 1.2 – J/P
Reverse Recovery Time 1** t
rr1
V
CC
= 3600V, I
E
= 200A, – 1.0 – µs
Reverse Recovery Time 2** t
rr2
di
e
/dt = -670A/ μ s, – 2.4 – µs
Reverse Recovery Charge** Q
rr
T
j
= 125°C, – 370 – µC
Reverse Recovery Energy** E
rec
t
off
= 60µs, Inductive Load – 0.7 – J/P
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT – – 42.0 K/kW
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi – – 66.0 K/kW
Contact Thermal Resistance, Case to Fin R
th(c-f)
Per Module, Thermal Grease Applied – 18.0 – K/kW
Mechanical Characteristics, T
j
= 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Comparative Tracking Index CTI – 600 – – –
Clearance – – 26.0 – – mm
Creepage Distance – – 56.0 – – mm
Internal Inductance L
C-E(int)
– – 54.0 – µH
Internal Lead Resistance R
C-E(int)
– – – – mΩ