C&H Technology CM1200HC-66H User Manual
Page 5
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT
( A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT
( A
)
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
EMITTER-COLLECTOR VOLTAGE
( V
)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
( V
)
2000
2400
1600
1200
800
400
0
3
4
2
1
0
5
6
5
6
4
3
2
1
0
1200
1600
800
400
0
2000
2400
5
6
4
3
2
1
0
1200
1600
800
400
0
2000
2400
2000
2400
1600
1200
800
400
0
6
8
4
2
0
10
12
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 15V
V
CE
= 20V
T
j
= 125
°
C
V
GE
= 10V
V
GE
= 8V
V
GE
= 12V
V
GE
= 20V
V
GE
= 15V