C&H Technology CM1500HC-66R User Manual
Page 6
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
4
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
OUTPUT CHARACTERISTICS
(TYPICAL)
(TYPICAL)
0
500
1000
1500
2000
2500
3000
0
2
4
6
8
10
12
Gate - Emitter Voltage [V]
Co
llec
to
r Cu
rr
e
n
t [
A
]
Tj = 25°C
V
CE
= V
GE
Tj = 150°C
0
500
1000
1500
2000
2500
3000
0
1
2
3
4
5
6
Collector - Emitter Voltage [V]
Co
llec
to
r Cu
rr
e
n
t [
A
]
V
GE
= 9V
V
GE
= 11V
V
GE
= 15V
V
GE
= 13V
Tj = 150°C
V
GE
= 19V
COLLECTOR-EMITTER SATURATION VOLTAGE
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
CHARACTERISTICS (TYPICAL)
0
500
1000
1500
2000
2500
3000
0
1
2
3
4
5
Collector-Emitter Saturation Voltage [V]
Co
llec
to
r Cu
rr
e
n
t [
A
]
V
GE
= 15V
Tj = 150°C
Tj = 125°C
Tj = 25°C
0
500
1000
1500
2000
2500
3000
0
1
2
3
4
5
Emitter-Collector Voltage [V]
Emi
tte
r C
u
rre
n
t [
A
]
Tj = 150°C
Tj = 25°C
Tj = 125°C
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