Vishay high power products, Half-bridge" igbt mtp (warp2 speed igbt), 70 a – C&H Technology 70MT060WHTAPBF User Manual
Page 4
Document Number: 94469
For technical questions, contact: [email protected]
www.vishay.com
Revision: 06-May-08
3
70MT060WHTAPbF
"Half-Bridge" IGBT MTP
(Warp2 Speed IGBT), 70 A
Vishay High Power Products
Note
(1)
T
0
, T
1
are thermistor´s temperatures
(2)
, temperature in Kelvin
THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Resistance
R
0
(1)
T
0
= 25 °C
-
30
-
k
Ω
Sensitivity index of the
thermistor material
β
(1)(2)
T
0
= 25 °C
T
1
= 85 °C
-
4000
-
K
R
0
R
1
-------
β 1
T
0
------
1
T
1
------
–
⎝
⎠
⎛
⎞
exp
=
DIODE SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Diode forward voltage drop
V
FM
I
C
= 70 A, V
GE
= 0 V
-
1.64
2.1
V
I
C
= 140 A, V
GE
= 0 V
-
2.1
2.4
I
C
= 70 A, V
GE
= 0 V, T
J
= 150 °C
-
1.69
1.9
Diode reverse recovery time
t
rr
V
CC
= 200 V, I
C
= 70 A
dI/dt = 200 A/µs
-
96
126
ns
Diode peak reverse current
I
rr
-
9.4
12.8
A
Diode recovery charge
Q
rr
-
440
750
nC
Diode reverse recovery time
t
rr
V
CC
= 200 V, I
C
= 70 A
dI/dt = 200 A/µs
T
J
= 125 °C
-
140
194
ns
Diode peak reverse current
I
rr
-
14
19
A
Diode recovery charge
Q
rr
-
950
1700
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction
temperature range
IGBT, Diode
T
J
- 40
-
150
°C
Thermistor
- 40
-
125
Storage temperature range
T
Stg
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
0.36
°C/W
Diode
-
-
0.8
Case-to-sink
Module
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
-
0.06
-
Mounting torque to heatsink
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for the
spread of the compound. Lubricated threads.
3 ± 10 %
Nm
Weight
66
g