Velleman DCA75 - Manual (Page 23)

Atlas DCA Pro User Guide December 2012 – Rev 1
Page 23
N-Ch Enhancement
mode IGBT
Red-G Green-C Blue-E
Gate threshold
VGE(on)=5.778V
at IC=5.00mA
Enhancement Mode IGBTs
IGBT is an acronym for Insulated Gate Bipolar Transistor.
It combines the input characteristics of a MOSFET with
the output characteristics of a Bipolar Junction Transistor.
IGBTs are available in N or P channel types, enhancement mode or depletion
mode and with or without a free-wheeling diode.
Generally, their operation is very similar to MOSFETs. The saturation
capability of an IGBT is often better than an equivalent sized MOSFET at high
currents. At low currents, the saturation voltage of an IGBT is often worse than
an equivalent sized MOSFET.
In this example we have an N-
Channel IGBT with an integral free
wheeling diode.
Note the names of the leads; Gate,
Collector and Emitter.
Similar to the MOSFET analysis, the gate threshold is the voltage between the
gate and emitter that causes the device to start conducting (between the
collector and emitter). The DCA Pro determines that conduction has started if
the collector current has reached 5.0mA.
The DCA Pro can drive the gate from 0V to 10V for enhancement mode
IGBTs.
(IGBT symbol based on EN60617: 05-05-19)
G
C
E