Rainbow Electronics IRLTS6342TRPBF - Manual (Page 2)

IRLTS6342PbF
2 www.irf.com
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400μs; duty cycle ≤ 2%.
ƒ When mounted on 1 ich square copper board.
„ R
θ
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒV
DSS
/ ΔT
J
Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C
R
DS(on)
––– 14.0 17.5
––– 17.5 22.0
V
GS(th)
Gate Threshold Voltage 0.5 ––– 1.1 V V
DS
= V
GS
, I
D
= 10μA
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -4.3 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 25 ––– ––– S
Q
g
Total Gate Charge ––– 11 –––
Q
gs
Gate-to-Source Charge ––– 0.5 –––
Q
gd
Gate-to-Drain Charge ––– 4.6 –––
R
G
Gate Resistance ––– 2.2 ––– Ω
t
d(on)
Turn-On Delay Time ––– 5.4 –––
t
r
Rise Time ––– 11 –––
t
d(off)
Turn-Off Delay Time ––– 32 –––
t
f
Fall Time ––– 15 –––
C
iss
Input Capacitance ––– 1010 –––
C
oss
Output Capacitance ––– 96 –––
C
rss
Reverse Transfer Capacitance ––– 70 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
Ù
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 13 20 ns
Q
rr
Reverse Recovery Charge ––– 5.8 8.7 nC
Thermal Resistance
Parameter Units
R
θJA
Junction-to-Ambient e °C/W
Max.
62.5
Typ.
–––
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
2.0
64
nA
nC
ns
pF
R
G
= 6.8 Ω
V
DS
= 10V, I
D
= 6.4A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DD
= 15V, V
GS
= 4.5V eÃ
I
D
= 6.4A
V
DS
= 15V
V
GS
= 12V
V
GS
= -12V
V
GS
= 4.5V
m Ω
μA
T
J
= 25°C, I
F
= 6.4A, V
DD
= 24V
di/dt = 100/μs d
T
J
= 25°C, I
S
= 8.3A, V
GS
= 0V d
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= 6.4A
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 8.3A d
V
GS
= 2.5V, I
D
= 6.7A d
Conditions
See Figs. 18
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= 25V