Littelfuse MG12300D-BN3MM Series - Manual (Page 4)

©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:08/06/13
Power Module
4
MG12300D-BN3MM
1200V IGBT Family
Figure 7: Diode Forward Characteristics
V
F
˄ V˅
1 3 2 0
0
120
600
240
I F
(A)
T
Vj =125°C
T
Vj =25°C
4
480
360
E
re
c
(mJ)
R
G
˄ Ω˅
0
12
8
4
0
20
I
F
=300 A
V
CE
=600V
T
Vj =125°C 16
2.5 5 7.5 15 10 12.5
Figure 8: Switching Energy vs. Gate Resistort
E
re
c
(mJ)
8
4
0
I
F
(A)
100
0
24
R
G
=3.3Ω
V
CE
=600V
T
Vj =125°C
300 200
12
20
250 50 150
16
Figure 9: Switching Energy vs. Forward Current
Rectangular Pulse Duration (seconds)
Z thJ
C
(K/
W
)
0.001 0.01 0.1 1 10
0.001
0.01
1
Diode
IGBT
0.1
Figure 10: Transient Thermal Impedance