Communication Concepts 2N4401 - Manual (Page 2)

2N4401
Low Power Bipolar Transistors
Page <2> 12/05/08 V1.1
Absolute Maximum Ratings
Rating Symbol 2N4401 Unit
Collector-Emitter Voltage V
CEO
40
V Collector-Base Voltage V
CBO
60
Emitter-Base Voltage V
EBO
6
Collector Current Continuous I
C
600 mA
Power Dissipation at T
a
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Power Dissipation at T
c
= 25°C
Derate above 25°C
1.5
12
W
W/°C
Operating and Storage JunctionTemperature Range T
j
, T
stg
-55 to +150 °C
Thermal Resistance
Junction to Case R
th (j-c)
83.3
°C/W
Junction to Ambient R
th (j-a)
200
Electrical Characteristics (T
a
= 25°C unless otherwise specified)
Characteristic Symbol 2N4401 Unit
Collector Emitter Voltage
I
C
= 1mA, I
B
= 0
BV
CEO
* >40
V
Collector Base Voltage
I
C
= 100 µA, I
E
= 0
BV
CBO
>60
Emitter Base Voltage
I
E
= 100 µA, I
C
= 0
BV
EBO
>6
Base Cut off Current
V
CE
= 35V, V
EB
= 0.4V
I
BEV
<0.1 µA
Collector Cut off Current
V
CE
= 35V, V
EB
= 0.4V
I
CEX
Collector Emitter Saturation Voltage
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CE (Sat)
*
<0.4
<0.75
V
Base Emitter Saturation Voltage
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
BE (Sat)
*
0.75 - 0.95
<1.2
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%