Communication Concepts 2N6488 - Manual (Page 4)

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
http://onsemi.com
4
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25 °C
20
Figure 5. Active−Region Safe Operating Area
2.0
10 20 80
T
J
= 150 °C
0.2
5.0
0.5
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
40
1.0
0.1
dc
2.0 60 4.0
2N6487, 2N6490
2N6488, 2N6491
CURVES APPLY BELOW RATED V
CEO
5.0 ms
1.0 ms
500 ms
100 ms
I C
, COLLECT
OR CURRENT
(AMP)
There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 _C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
C, CAP
ACIT
ANCE (pF)
300
V
R
, REVERSE VOLTAGE (VOLTS)
1.0 2.0 5.0 20 10
200
100
70
50
C
ib
C
ob
50 0.5
Figure 6. Turn−Off Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME
(ns)
0.2 5.0 1.0 2.0 20
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25 °C
t
s
0.5
t
f
5000
100
200
1000
500
50
NPN
PNP
10
Figure 7. Capacitances
C
ob
NPN
PNP
700
1000
T
J
= 25 °C
500
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.5 0.2 10 1.0 2.0
100
50
h
FE
, DC CURRENT
GAIN
T
J
= 150 °C
25 °C
- 55 °C
200
20
20
NPN
2N6487, 2N6488 PNP
2N6490, 2N6491
I
C
, COLLECTOR CURRENT (AMP)
h
FE
, DC CURRENT
GAIN
T
J
= 150 °C
25 °C
- 55 °C
5.0
V
CE
= 2.0 V
V
CE
= 2.0 V
10
5.0 0.5 0.2 10 1.0 2.0 20 5.0
500
100
50
200
20
5.0
10