Communication Concepts MJE243 - Manual (Page 4)

MJE243 − NPN, MJE253 − PNP
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4
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
30
0.01
0.05
Figure 5. Active Region Safe Operating Area
500 ms
dc
5.0
20 10 7.0 5.0 3.0 2.0 1.0
100 ms
T
J
= 150 °C
I C
, COLLECT
OR CURRENT
(AMP)
0.2
0.5
1.0
2.0
0.02
1.0 ms
100 70 50
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25 °C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
MJE243/MJE253
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150 _C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
I
C
, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 6. Turn−Off Time
t, TIME
(ns)
30
20
0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 1 3
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25 °C
t
s
t
f
V
R
, REVERSE VOLTAGE (VOLTS)
10
100
100
200
50
Figure 7. Capacitance
70
50 20 10 7.0 5.0 3.0 1.0
C, CAP
ACIT
ANCE (pF)
2.0
T
J
= 25 °C
C
ib
C
ob
MJE243 (NPN)
MJE253 (PNP)
30
NPN MJE243
PNP MJE253
20
70 30