Communication Concepts MPSH81 - Manual (Page 3)

MPSH81 / MMBTH81
Typical Characteristics
(continued)
PNP RF Transistor
(continued)
Input / Output Capacitance
vs Reverse Bias Voltage
-10 -8 -6 -4 -2 0
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
T
A
NC
E
(
p
F
)
C ibo
f = 1.0 MHz
C obo
Contours of Constant Gain
Bandwidth Product (f )
0.1 1 10 100
-14
-12
-10
-8
-6
-4
-2
0
I - COLLECTOR CURRENT (mA)
V
- CO
L
L
EC
T
O
R
VO
L
T
A
G
E (
V
)
CE
C
- - - -
T
200 MHz 500 MHz
900 MHz
200 MHz
500 MHz
1200 MHz
1500 MHz
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
P
O
W
E
R
DI
SS
IP
A
T
IO
N (
m
W
)
D
SOT-23
TO-92
°
Base-Emitter ON Voltage
vs Collector Current
0.1 1 10 100
0
0.2
0.4
0.6
0.8
1
I - COLLE CTOR CURRENT (mA)
V
-
B
A
SE-
E
M
IT
T
E
R
O
N
VO
L
T
A
G
E (
V
)
BE
(O
N
)
C
V = 10V
CE
- - - -
A T = 25°C A
T = 100°C A
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
-1.6
-1.4
-1.2
- 1
-0.8
-0.6
-0.4
I - COLLECTOR CURRENT (mA) V
- B
A
SE
-
E
M
IT
T
E
R
S
A
T
. V
O
L
T
A
G
E
(V
)
BE
( S
A T
)
C
- - - -
T = 55°C A -
T = 25°C A
T = 125°C
A
I = 10 I
C B
Collector Reverse Current
vs Ambient Temperature
25 50 75 100 125 150
0.01
0.1
1
10
100
T - AM BIENT TE MPE RATURE ( C) I
-
C
O
L
L
E
C
T
O
R
R
E
V
E
R
S
E
C
U
R
R
E
N
T
(
nA
)
CE
S
A
V = -6.0V CE
V = -3.0V
CE
°