Silicon Power SMCT AA 32N14_N-MOS VCS, TO-247 - Manual (Page 5)

Application Notes
Packaging and Handling
SMCTAA32N14A10
A1. Use of Gate Return
The VCS was designed for high di/dt applications. An independent cathode connection for use as "gate return" is provided
on pin 2 to minimize the effects of rapidly changing Anode-Cathode current on the Gate control voltage, (V=L*di/dt). It is
therefore, critcal that the user utilize the Gate Return as the point at which the gate driver reference (return) is attached to the
VCS device.
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Advanced Pulse Power Device
N-MOS VCS, TO-247
Data Sheet (Rev 0 - 12/19/07)
CAO 05/28/09
As with all MOS gated devices, proper handling
procedures must be observed to prevent electrostatic
discharge which may result in permanant damage to
the gate of the device
Pin 1 : Gate
Pin 2 : Gate return
Pin 3 : Anode
Pin 4 : Cathode
Pin 5 : Cathode
1
CAO 05/28/09