Technical specifications, Absolute maximum ratings – MagTek LOW POWER SHIFT-OUT User Manual

Page 12

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Low Power Shift-Out IntelliHead

6

TECHNICAL SPECIFICATIONS

Absolute Maximum Ratings

Parameter

Conditions (-40

°C to +85°C

unless otherwise stated)

Value Units

V

DD

Steady-state

-0.3 to 4.0V

V

STROBE Input Voltage

Steady-state

-0.3 to VDD+0.3

V

STROBE Protection Diode Current

Steady-state

-20 to 20

DATA Input Voltage

Steady-state

-0.3 to VDD+0.3

V

DATA Protection Diode Current

Steady-state

-20 to 20

mA

DATA Output Current Sourcing

Steady-state

Internally limited

DATA Output Current Sinking

Steady-state

20

mA

Storage Temperature

Steady-state

-55 to

100

˚C

ESD Immunity*

Human Body Model, JESD22-A114-
A, class 2

NOT TESTED

V

ESD Immunity*

Machine Model, JESD22-A115-A,
class 2

NOT TESTED

V

ESD Immunity*

Charge Device Model, ESD-
STM5.3.1-1999, classification C3

NOT TESTED

V

Latch-up Immunity

85 °C, EIA/JESD78

NOT TESTED

mA

*

ESD Immunity refers to a pin-to-pin discharge (not to discharges to the head can). The 5V-to-3V
Shift-Out IntelliHead contains other components in addition to the Delta ASIC (21006541), so the
ESD rating of 21006541 is not necessarily applicable.

Red font indicates a difference relative to 99875337.

Electrical Characteristics and Recommended Operating Conditions

Value

Parameter

Conditions (-40 °C to +85 °C)

Min Max

Units

V

DD

Operating

2.85

3.6 V

V

DD

Time Constant

To guarantee proper reset functioning under all
conditions

; Not needed; already built-in.

0

I

DD

See “Current Consumption” section

1.2

mA

V

OL

DATA

V

DD

=

2.85

V; I

OL

= 2 mA

0.40

V

I

OH

DATA

V

DATA

= 0 V to 0.85*V

DD

; Steady-state

12

48

μA

V

IH

DATA

0.80* V

DD

V

V

IL

DATA

0.20* V

DD

V

VT+ STROBE

Positive-going threshold

0.40* V

DD

0.80*

V

DD

V

VT- STROBE

Negative-going threshold

0.20* V

DD

0.40*

V

DD

V

STROBE PULL-UP/DWN

STROBE driver must meet the above
threshold constraints while driving this
resistance to VDD or to ground.

18

k

Hysteresis STROBE

VT+ - VT-

0.4

1.2

V

STROBE Driver Leakage

Leakage constraint for MCU STROBE Driver
when in high-Z state with STROBE pulled
high by the IntelliHead.

N/A 10

μA

C

LOAD

DATA‡

50

pF

Electrostatic Discharge

ESD to head-can with head-can well-
grounded; 150 pF and 330

Ω network

-15 +15 kV

Exceeding CLOAD Max DATA will affect the maximum rate of DATA.

Red font indicates a difference relative to 99875337.

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