Preliminary technical specifications – Delta Electronics DNQ12 User Manual

Page 2

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DS_DNQ12SIP25_07172008

2

PRELIMINARY TECHNICAL SPECIFICATIONS

T

A

= 25°C, airflow rate = 300 LFM, V

in

= 10Vdc and 14Vdc, and nominal Vout unless otherwise noted.

PARAMETER

NOTES and CONDITIONS

DNQ12S0A0R25 (Standard)

Min.

Typ.

Max.

Units

ABSOLUTE MAXIMUM RATINGS

Input Voltage (Continuous)

-0.3

14

Vdc

Operating Temperature

Refer to figure 24 for measuring point

-40

125

°C

Storage Temperature

-55

125

°C

INPUT CHARACTERISTICS

Operating Input Voltage

10.0

12.0

14.0

Vdc

Maximum Input Current

Vin=10.0 to 14.0, Vo,set=5Vdc, Io=Io,max

14

Adc

Inrush Transient

1

A

2

s

Input Reflected Ripple Current (5Hz to 20MHz)

1µH source impedance; Vin,min to Vin,max, Io=Io,max ;
See Test configuration section

60

mAp-p

Input Ripple Rejection (120Hz)

50

dB

Recommended Input Fuse

See Safety Considerations section

30

A

OUTPUT CHARACTERISTICS

Output Voltage Set-point

Vin=Vin,min, Io=Io,max, T

A

=25°C

-1.2

+1.2

% Vo,set

Output Voltage Adjustable Range

Selected by an external resistor

0.7887

5.5

Vdc

Output Voltage Regulation

Over Line

Vin=Vin,min to Vin,max

0.01

0.1

% Vo,set

Over Load

Io=Io,min to Io,max

0.1

0.25

% Vo,set

Over Temperature

T

A

= T

A, min

to T

A, max

0.5

1.6

%

Vo,set

Total Output Voltage Range

Over all operating input voltage, resistive load, and
temperature conditions until end of life

-3.0

+3.0

% Vo,set

Output Voltage Ripple and Noise

Cout=10µF tantalum//1µF ceramic capacitors

RMS (5Hz to 20MHz bandwidth)

Vin=Vin,typ, Io=Io,min to Io,max

5

15

mVrms

Peak-to-Peak (5Hz to 20MHz bandwidth)

Vin=Vin,typ, Io=Io,min to Io,max

15

50

mVp-p

External Capacitance

ESR ≧1mΩ

1000

µF

ESR ≧10mΩ at Vo,set=5Vdc

5,000

µF

ESR ≧10mΩ at Vo,set below 3.3Vdc

10,000

µF

Output Current

0

25

Adc

Output Current Limit Inception (Hiccup Mode)

150

200

% Io

Output Short-Circuit Current (Hiccup Mode)

Vo ≦ 250mV

1

Adc

Dynamic Load Response

dIo/dt=5A/µs, Vin=Vin,typ, T

A

=25°C,

Cout=10µF tantalum//1µF ceramic capacitors

Positive Step Change in Output Current

Load change from 50% to 100% of Io,max

150

mV

Negative Step Change in Output Current

Load change from 100% to 50% of Io,max

150

mV

Settling Time (Vo<10%peak deviation)

25

µs

EFFICIENCY

Vo,set =0.8V

Vin=Vin,typ, Io=Io,max, T

A

=25°C

79.0

%

Vo,set =1.2V

Vin=Vin,typ, Io=Io,max, T

A

=25°C

84.7

%

Vo,set =1.5V

Vin=Vin,typ, Io=Io,max, T

A

=25°C

87.3

%

Vo,set =1.8V

Vin=Vin,typ, Io=Io,max, T

A

=25°C

88.9

%

Vo,set =2.0V

Vin=Vin,typ, Io=Io,max, T

A

=25°C

89.7

%

Vo,set =2.5V

Vin=Vin,typ, Io=Io,max, T

A

=25°C

91.4

%

Vo,set =3.3V

Vin=Vin,typ, Io=Io,max, T

A

=25°C

93.1

%

Vo,set =5.0V

Vin=Vin,typ, Io=Io,max, T

A

=25°C

95.1

%

FEATURE CHARACTERISTICS

Switching Frequency

500

kHz

SEQ/ENA

Signal

Interface

Logic High (SEQ/ENA pin open - Module Off)

SEQ/ENA Voltage

Vin=Vin,min to Vin,max

3.5

14

V

SEQ/ENA Current

Vin=Vin,min to Vin,max

0.5

2.33

mA

Logic Low (Module ON)

SEQ/ENA Voltage

Vin=Vin,min to Vin,max

1.2

V

SEQ/ENA Current

Vin=Vin,min to Vin,max

200

µA

Turn-On Transient

Vin=Vin,typ, Io=Io,max

Turn-On delay Time, From remote On/Off

From V

SEQ/ENA

=1.2V to Vo=10% of Vo,set

1

ms

Turn-On delay Time, From Input

From Vin= Vin,min to Vo=10% of Vo,set

1

ms

Turn-On rise Time

Time for Vo to rise from 10% to 90% of Vo,set

5

ms

Output Voltage Overshoot - Startup

Io=80% of Io,max, Vin=12Vdc, T

A

=25℃

0.1

0.5

% Vo,set

Output Overvoltage Protection (Latching)

5.7

6.0

6.3

V

Input Undervoltage Lockout

Turn-on Threshold

9.9

V

Turn-off Threshold

8.1

V

Remote Sense Range

0.5

V

GENERAL SPECIFICATIONS

MTBF

Io=80%Io, max, Ta=25℃

3.03

MHours

Weight

20

Grams

Over-Temperature Shutdown

Refer to Figure 24 for the measuring point

130

°C

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