Intel 80L186EA User Manual

Page 24

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80C186EA 80C188EA 80L186EA 80L188EA

I

CC

VERSUS FREQUENCY AND VOLTAGE

The current (I

CC

) consumption of the processor is

essentially composed of two components I

PD

and

I

CCS

I

PD

is the quiescent current that represents internal

device leakage and is measured with all inputs or
floating outputs at GND or V

CC

(no clock applied to

the device) I

PD

is equal to the Powerdown current

and is typically less than 50 mA

I

CCS

is the switching current used to charge and

discharge parasitic device capacitance when chang-
ing logic levels Since I

CCS

is typically much greater

than I

PD

I

PD

can often be ignored when calculating

I

CC

I

CCS

is related to the voltage and frequency at which

the device is operating It is given by the formula

Power

e

V

c

I

e

V

2 c

C

DEV

c

f

I

e

I

CC

e

I

CCS

e

V

c

C

DEV

c

f

Where V

e

Device operating voltage (V

CC

)

C

DEV

e

Device capacitance

f

e

Device operating frequency

I

CCS

e

I

CC

e

Device current

Measuring C

DEV

on a device like the 80C186EA

would be difficult Instead C

DEV

is calculated using

the above formula by measuring I

CC

at a known V

CC

and frequency (see Table 11) Using this C

DEV

val-

ue I

CC

can be calculated at any voltage and fre-

quency within the specified operating range

EXAMPLE Calculate the typical I

CC

when operating

at 20 MHz 4 8V

I

CC

e

I

CCS

e

4 8

c

0 515

c

20

49 mA

PDTMR PIN DELAY CALCULATION

The PDTMR pin provides a delay between the as-
sertion of NMI and the enabling of the internal
clocks when exiting Powerdown A delay is required
only when using the on-chip oscillator to allow the
crystal or resonator circuit time to stabilize

NOTE

The PDTMR pin function does not apply when
RESIN is asserted (i e a device reset during Pow-
erdown is similar to a cold reset and RESIN must
remain active until after the oscillator has stabi-
lized)

To calculate the value of capacitor required to pro-
vide a desired delay use the equation

440

c

t

e

C

PD

(5V 25 C)

Where t

e

desired delay in seconds

C

PD

e

capacitive load on PDTMR in mi-
crofarads

EXAMPLE To get a delay of 300 ms a capacitor
value of C

PD

e

440

c

(300

c

10

b

6

)

e

0 132 mF is

required Round up to standard (available) capaci-
tive values

NOTE

The above equation applies to delay times greater
than 10 ms and will compute the TYPICAL capaci-
tance needed to achieve the desired delay A delay
variance of

a

50% or

b

25% can occur due to

temperature

voltage

and device process ex-

tremes In general higher V

CC

and or lower tem-

perature will decrease delay time while lower V

CC

and or higher temperature will increase delay time

Table 11 C

DEV

Values

Parameter

Typ

Max

Units

Notes

C

DEV

(Device in Reset)

0 515

0 905

mA V MHz

1 2

C

DEV

(Device in Idle)

0 391

0 635

mA V MHz

1 2

1 Max C

DEV

is calculated at b40 C all floating outputs driven to V

CC

or GND and all

outputs loaded to 50 pF (including CLKOUT and OSCOUT)
2 Typical C

DEV

is calculated at 25 C with all outputs loaded to 50 pF except CLKOUT and

OSCOUT which are not loaded

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