Electrical characteristics and ac timing, 1 refresh parameters by device density, Datasheet – Samsung M391B5773DH0 User Manual
Page 26: Ddr3l sdram, Unbuffered dimm
- 26 -
datasheet
DDR3L SDRAM
Rev. 1.0
Unbuffered DIMM
16. Electrical Characteristics and AC timing
[0
°C<T
CASE
≤95 °C, V
DDQ
= 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V); V
DD
= 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)]
16.1 Refresh Parameters by Device Density
NOTE :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or requirements referred to in
this material.
16.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
16.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
[ Table 17 ] DDR3-800 Speed Bins
Parameter
Symbol
1Gb
2Gb
4Gb
8Gb
Units
NOTE
All Bank Refresh to active/refresh cmd time
tRFC
110
160
300
350
ns
Average periodic refresh interval
tREFI
0
°C ≤ T
CASE
≤ 85°C
7.8
7.8
7.8
7.8
µs
85
°C < T
CASE
≤ 95°C
3.9
3.9
3.9
3.9
µs
1
Speed
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Units
NOTE
Bin (CL - tRCD - tRP)
6-6-6
7-7-7
9-9-9
11-11-11
Parameter
min
min
min
min
CL
6
7
9
11
tCK
tRCD
15
13.13
13.5
13.75
ns
tRP
15
13.13
13.5
13.75
ns
tRAS
37.5
37.5
36
35
ns
tRC
52.5
50.63
49.5
48.75
ns
tRRD
10
7.5
6.0
6.0
ns
tFAW
40
37.5
30
30
ns
Speed
DDR3-800
Units
NOTE
CL-nRCD-nRP
6 - 6 - 6
Parameter
Symbol
min
max
Internal read command to first data
tAA
15
20
ns
ACT to internal read or write delay time
tRCD
15
-
ns
PRE command period
tRP
15
-
ns
ACT to ACT or REF command period
tRC
52.5
-
ns
ACT to PRE command period
tRAS
37.5
9*tREFI
ns
CL = 6 / CWL = 5
tCK(AVG)
2.5
3.3
ns
1,2,3
Supported CL Settings
6
nCK
Supported CWL Settings
5
nCK