Samsung M391B5773DH0 - Manual (Page 4)

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datasheet
DDR3L SDRAM
Rev. 1.0
Unbuffered DIMM
1. DDR3L Unbuffered DIMM Ordering Information
NOTE :
1. "##" - F8/H9/K0
2. F8 - 1066Mbps 7-7-7 / H9 - 1333Mbps 9-9-9 / K0 - 1600Mbps 11-11-11
- DDR3-1600(11-11-11) is backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)
2. Key Features
• JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Power Supply
• V
DDQ
= 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
• 400MHz f
CK
for 800Mb/sec/pin, 533MHz f
CK
for 1066Mb/sec/pin, 667MHz f
CK
for 1333Mb/sec/pin, 800MHz f
CK
for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10,11
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) and 8 (DDR3-1600)
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then T
CASE
85 °C, 3.9us at 85°C < T
CASE
≤ 95°C
• Asynchronous Reset
3. Address Configuration
Part Number 2 Density Organization Component Composition
Number of
Rank
Height
M391B5773DH0-YF8/H9/K0 2GB 256Mx64 256Mx8(K4B2G0846D-HY##)*9 1 30mm
M391B5273DH0-YF8/H9/K0 4GB 512Mx72 256Mx8(K4B2G0846D-HY##)*18 2 30mm
Speed
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
Unit
6-6-6 7-7-7 9-9-9 11-11-11
tCK(min) 2.5 1.875 1.5 1.25 ns
CAS Latency 6 7 9 11 nCK
tRCD(min) 15 13.125 13.5 13.75 ns
tRP(min) 15 13.125 13.5 13.75 ns
tRAS(min) 37.5 37.5 36 35 ns
tRC(min) 52.5 50.625 49.5 48.75 ns
Organization Row Address Column Address Bank Address Auto Precharge
256Mx8(2Gb) based Module A0-A14 A0-A9 BA0-BA2 A10/AP