Vishay semiconductors – C&H Technology VS-GT100DA120U User Manual
Page 2
VS-GT100DA120U
www.vishay.com
Vishay Semiconductors
Revision: 13-Sep-13
1
Document Number: 93196
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery
• T
J
maximum = 150 °C
• Fully isolated package
• Very low internal inductance (
5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Very low V
CE(on)
• Low EMI, requires less snubbing
Note
(1)
Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC
100 A at 119 °C
V
CE(on)
typical at 100 A, 25 °C
1.73 V
Package
SOT-227
Circuit
Single Switch Diode
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
(1)
T
C
= 25 °C
258
A
T
C
= 80 °C
174
Pulsed collector current
I
CM
450
Clamped inductive load current
I
LM
450
Diode continuous forward current
I
F
T
C
= 25 °C
50
T
C
= 80 °C
34
Peak diode forward current
I
FSM
180
Gate to emitter voltage
V
GE
± 20
V
Power dissipation, IGBT
P
D
T
C
= 25 °C
893
W
T
C
= 119 °C
221
Power dissipation, diode
P
D
T
C
= 25 °C
176
T
C
= 119 °C
44
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V