C&H Technology VS-GT100DA120U - Manual (Page 7)

VS-GT100DA120U
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Vishay Semiconductors
Revision: 13-Sep-13 6 Document Number: 93196
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Fig. 16 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Fig. 17 - Maximum Thermal Impedance Z
thJC
Characteristics (Diode)
0.001
0.01
0.1
1
0.00001
93196_16
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.01
0.1
10
1
0.00001
93196_17
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC