C&H Technology EMF050J60U - Manual (Page 4)

VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11 3 Document Number: 93494
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Q2 - Q3 IGBT
Collector to emitter breakdown voltage BV
CES
V
GE
= 0 V, I
C
= 500 μA 900 - - V
Temperature coefficient of breakdown
voltage
BV
CES
/ T
J
V
GE
= 0 V, I
C
= 500 μA (25 °C to 125 °C) - - 8.5 - V/°C
Collector to emitter voltage V
CE(ON)
V
GE
= 15 V, I
C
= 27 A - 2.45 2.8
V
V
GE
= 15 V, I
C
= 50 A - 2.73 3.2
V
GE
= 15 V, I
C
= 27 A, T
J
= 125 °C - 2 2.35
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 2.43 2.9
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 2.8 4.5 6.3
Temperature coefficient of threshold
voltage V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 11.7 - mV/°C
Forward transconductance g
fe
V
CE
= 20 V, I
C
= 50 A - 68 - s
Transfer characteristics V
GE
V
CE
= 20 V, I
C
= 50 A - 6.9 - V
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 900 V - 0.006 0.38
mA
V
GE
= 0 V, V
CE
= 900 V, T
J
= 125 °C - 1.4 3
Gate to emitter leakage current I
GES
V
GE
= ± 20 V, V
CE
= 0 V - - ± 200 nA
D1 - D2 CLAMPING DIODE
Cathode to anode blocking voltage V
BR
I
R
= 100 μA 600 - -
V
Forward voltage drop V
FM
I
F
= 30 A - 1.84 2.12
I
F
= 30 A, T
J
= 125 °C - 1.37 1.65
Reverse leakage current I
RM
V
R
= 600 V - 0.002 0.1
mA
V
R
= 600 V, T
J
= 125 °C - 0.9 6
D3 - D4 AP DIODE
Forward voltage drop V
FM
I
F
= 50 A - 2.7 3.2
V
I
F
= 50 A T
J
= 125 °C - 2.8 3.3
D5 - D6 AP DIODE
Forward voltage drop V
FM
I
F
= 30 A - 1.93 2.37
V
I
F
= 30 A T
J
= 125 °C - 1.48 1.9
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS