Vishay semiconductors – C&H Technology EMF050J60U User Manual
Page 9
VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11
8
Document Number: 93494
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Fig. 13 - Typical D5 - D6 Antiparallel Diode Reverse
Recovery Time vs. dI
F
/dt
V
R
= 200 V, I
F
= 30 A
Fig. 14 - Typical D5 - D6 Antiparallel Diode Reverse
Recovery Current vs. dI
F
/dt
V
R
= 200 V, I
F
= 30 A
Fig. 15 - Typical D5 - D6 Antiparallel Diode Reverse Recovery Charge vs. dI
F
/dt
V
R
= 200 V, I
F
= 30 A
Fig. 16 - Maximum Thermal Impedance Z
thJC
Characteristics (Q1 - Q4 IGBT)
t
rr
(ns)
dI
F
/dt (A/μs)
100
200
300
400
93494_13
500
40
50
160
140
70
100
120
150
90
60
80
110
130
125 °C
25 °C
I
rr
(A)
dI
F
/dt (A/μs)
100
200
300
400
93494_14
500
1
21
7
13
3
9
17
15
11
19
5
125 °C
25 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100
200
300
400
93494_15
500
0
200
100
1100
1000
400
600
800
500
700
900
300
125 °C
25 °C
0.001
0.01
0.1
1
0.00001
93494_16
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC