C&H Technology VS-GB300TH120U - Manual (Page 3)

VS-GB300TH120U
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12 2 Document Number: 94751
For technical questions within your region: [email protected] , [email protected] , [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 300 A, T
J
= 25 °C - 3.10 3.60
V
GE
= 15 V, I
C
= 300 A, T
J
= 125 °C - 3.45 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 3.0 mA, T
J
= 25 °C 4.4 5.2 6.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 300 A, R
g
= 3.3
,
V
GE
= ± 15 V, T
J
= 25 °C
- 662 -
ns
Rise time t
r
- 142 -
Turn-off delay time t
d(off)
- 633 -
Fall time t
f
- 117 -
Turn-on switching loss E
on
- 19.7 -
mJ
Turn-off switching loss E
off
- 22.4 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 300 A, R
g
= 3.3 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 660 -
ns
Rise time t
r
- 143 -
Turn-off delay time t
d(off)
- 665 -
Fall time t
f
- 137 -
Turn-on switching loss E
on
- 24.9 -
mJ
Turn-off switching loss E
off
- 28.4 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
- 25.3 -
nF Output capacitance C
oes
- 2.25 -
Reverse transfer capacitance C
res
- 0.91 -
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 600 V, V
CEM
 1200 V
- 2550 - A
Internal gate resistance R
gint
- 1.2 - 
Stray inductance L
CE
- - 18 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.32 - m 
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 300 A
T
J
= 25 °C - 1.82 2.25
V
T
J
= 125 °C - 1.95 -
Diode reverse recovery charge Q
rr
I
F
= 300 A, V
R
= 600 V,
dI/dt = - 2125 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 21.5 -
μC
T
J
= 125 °C - 32.4 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 178 -
A
T
J
= 125 °C - 225 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 10.4 -
mJ
T
J
= 125 °C - 16.6 -