Vishay semiconductors, Circuit configuration – C&H Technology VS-GB300TH120U User Manual
Page 6
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VS-GB300TH120U
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
5
Document Number: 94751
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. Gate Resistance
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
0
3
6
9
12
15
18
24
21
0
5
10
15
20
25
30
35
R
g
(
Ω)
E
(mJ)
E
rec
V
CC
= 600 V
I
C
= 300 A
V
GE
= - 15 V
T
J
= 125 °C
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
t (s)
Z
thJC
(K/W)
Diode
1
6
7
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
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