C&H Technology VS-GA400TD60S - Manual (Page 4)

Document Number: 93363 For technical questions, contact: [email protected] www.vishay.com
Revision: 31-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GA400TD60S
Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
Vishay Semiconductors
Fig. 1 - Typical Output Characteristics,
T
J
= 25 °C, V
GE
= 15 V
Fig. 2 - Typical Output Characteristics,
T
J
= 125 °C
Fig. 3 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 4 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature,
V
GE
= 15 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction and storage temperature range T
J
, T
Stg
- 40 - 150 °C
Junction to case per leg
IGBT
R
thJC
- - 0.08
°C/W Diode - - 0.4
Case to sink per module R
thCS
- 0.05 -
Mounting torque
case to heatsink: M6 screw 4 - 6
Nm
case to terminal 1, 2, 3: M5 screw 2 - 4
Weight - 270 - g
I C
(A)
V
CE
(V)
0.25 0.50 1.00 1.50 2.00 0.75 1.25 1.75
0
93363_01
800
200
100
400
300
600
500
700
T
J
= 25 °C
T
J
= 125 °C
I C
(A)
V
CE
(V)
0.25 0.50 1.00 1.50 2.00 1.25 0.75 1.75
93363_02
0
800
200
100
400
300
600
500
700
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
300 100 800 500 400 200 600 700 0
100
160
0
40
60
140
80
120
20
93363_03
DC
V
CE
(V)
T
J
(°C)
20 40 80 120 160 60 100 140
0.6
1.0
1.4
93363_04
1.7
0.9
1.3
0.8
1.2
1.6
0.7
1.1
1.5
400 A
600 A
300 A
100 A