Vishay semiconductors – C&H Technology VS-GA400TD60S User Manual
Page 6
Document Number: 93363
For technical questions, contact:
www.vishay.com
Revision: 31-May-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
GA400TD60S
Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
Vishay Semiconductors
Fig. 11 - Typical IGBT Energy Loss vs. I
C
,
T
J
= 125 °C, V
CC
= 360 V, R
g
= 1.5
,
V
GE
= 15 V, L = 500 μH
Fig. 12 - Typical IGBT Switching Time vs. I
C
,
T
J
= 125 °C, V
CC
= 360 V, R
g
= 1.5
,
V
GE
= 15 V, L = 500 μH
Fig. 13 - Typical IGBT Energy Loss vs. R
g
,
T
J
= 125 °C, I
C
= 400 A, V
CC
= 360 V,
V
GE
= 15 V, L = 500 μH
Fig. 14 - Typical IGBT Switching Time vs. R
g
,
T
J
= 125 °C, I
C
= 400 A, V
CC
= 360 V,
V
GE
= 15 V, L = 500 μH
Fig. 15 - Typical Reverse Recovery Time vs. dI
F
/dt,
V
CC
= 400 V, I
F
= 300 A
Fig. 16 - Typical Reverse Recovery Current vs. dI
F
/dt,
V
CC
= 400 V, I
F
= 300 A
Ener
g
y (mJ)
I
C
(A)
0
100
200
400
300
0
93363_11
175
150
100
125
50
75
25
E
on
E
off
S
witchin
g
Time (ns)
I
C
(A)
0
100
200
400
300
10
93363_12
10 000
100
1000
t
d(off)
t
d(on)
t
r
t
f
Ener
g
y (mJ)
R
g
(
Ω)
0
5
10
20
15
25
0
93363_13
175
150
75
125
100
50
25
E
on
E
off
S
witchin
g
Time (ns)
R
g
(
Ω)
0
5
15
20
10
25
100
93363_14
10 000
1000
t
d(off)
t
d(on)
t
f
t
r
t
rr
(ns)
dI
F
/dt (A/μs)
100 200
400
600
800
1000
300
500
700
900
100
300
240
120
160
200
260
280
140
180
220
93363_15
T
J
= 25 °C
T
J
= 125 °C
I
rr
(A)
dI
F
/dt (A/µs)
100 200
400
600
800
1000
300
500
700
900
10
130
90
110
120
30
50
70
80
100
20
40
60
93363_16
T
J
= 25 °C
T
J
= 125 °C