Vishay semiconductors – C&H Technology VS-HFA70EA120 User Manual

Page 3

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VS-HFA70EA120

www.vishay.com

Vishay Semiconductors

Revision: 20-Jul-12

2

Document Number: 94747

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

DYNAMIC RECOVERY CHARACTERISTICS (T

J

= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX.

UNITS

Reverse recovery time, per leg

t

rr

I

F

= 1 A; dI

F

/dt = 200 A/μs; V

R

= 30 V

-

48

-

ns

T

J

= 25 °C

I

F

= 50 A

dI

F

/dt = - 200 A/μs

V

R

= 200 V

-

145

-

T

J

= 125 °C

-

218

-

Peak recovery current, per leg

I

RRM

T

J

= 25 °C

-

13

-

A

T

J

= 125 °C

-

19

-

Reverse recovery charge, per leg

Q

rr

T

J

= 25 °C

-

910

-

nC

T

J

= 125 °C

-

1920

-

Junction capacitance, per leg

C

T

V

R

= 1200 V

-

27

-

pF

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX.

UNITS

Junction to case, single leg conducting

R

thJC

-

-

0.35

°C/W

Junction to case, both legs conducting

-

-

0.175

Case to heatsink, per leg

R

thCS

Flat, greased and surface

-

0.05

-

Weight

-

30

-

g

Mounting torque, on terminals and heatsink

T

-

-

1.3

Nm

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