Vishay semiconductors, Thermistor electrical specifications (t, 25 °c unless otherwise specified) – C&H Technology GB75YF120UT User Manual
Page 4: Thermal and mechanical specifications
GB75YF120UT
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-13
3
Document Number: 93172
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
150 °C
Fig. 4 - Reverse Bias SOA
T
J
= 150 °C; V
GE
= 15 V
THERMISTOR ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Resistance
R
25
4538
5000
5495
T
J
= 100 °C
468.6
493.3
518
B value
B
T
J
= 25 °C/50 °C
3307
3375
3443
°K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
MIN.
TYP. MAX. UNITS
Junction to case IGBT
R
thJC
(IGBT)
-
-
0.26
°C/W
Junction to case DIODE
R
thJC
(DIODE)
-
-
0.56
Case to sink, flat, greased surface
R
thCS
(MODULE)
-
0.02
-
Mounting torque (M5)
2.7
-
3.3
Nm
Weight
-
170
-
g
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
I
C
(A)
T
C
(°C)
0
20
40
60
80
100 120 140 160
0
100
200
300
400
500
T
C
(°C)
P
D
(W)
1
10
100
1000
10000
0.01
0.1
1
10
100
1000
V
CE
(V)
IC (A)
10
100
1000
10000
1
10
100
1000
V
CE
(V)
I
C
(A)