Vishay semiconductors – C&H Technology GB75YF120UT User Manual
Page 7
GB75YF120UT
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-13
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Document Number: 93172
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Fig. 17 - Typical Diode I
RR
vs. I
F
T
J
= 125 °C
Fig. 18 - Typical Diode I
RR
vs. dI
F
/dt
V
CC
= 600 V; I
F
= 75 A
Fig. 19 - Typical Diode I
RR
vs. R
g
T
J
= 125 °C; I
F
= 75 A
Fig. 20 - Typical Gate Charge vs. V
GE
I
CE
= 5.0 A; L = 600 μH
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
0
20
40
60
80
100
120
5 ohm
47 ohm
27 ohm
I
F
(A)
I
RR
(A)
400
800
1200
1600
2000
0
20
40
60
80
100
dI
F
/ dt (A/ μs)
I
RR
(A)
0
10
20
30
40
50
0
20
40
60
80
100
R
G
(
Ω)
I
RR
(A)
Q
G
, Total Gate Charge (nC)
V
GE
(V)
0
100
200
300
400
500
600
700
0
2
4
6
8
10
12
14
16
typical value
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
1E-005
0.0001
0.001
0.01
0.1
1
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE )
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)