C&H Technology VS-GB50NP120N - Manual (Page 5)

VS-GB50NP120N
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Vishay Semiconductors
Revision: 06-Aug-12 4 Document Number: 93418
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Fig. 3 - Switching Loss vs. Collector Current
T
J
= 125 °C, V
CC
= 600 V, V
GE
= ± 15 V, R
g
= 18 
Fig. 4 - Switching Loss vs. Gate Resistance
T
J
= 125 °C, V
CC
= 600 V, V
GE
= ± 15 V, I
C
= 50 A
Fig. 5 - Gate Charge Characteristics
I
C
= 50 A, T
J
= 25 °C
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 7 - Typical Switching Time vs. I
C
T
J
= 125 °C, V
CC
= 600 V, V
GE
= ± 15 V, R
g
= 18 
Fig. 8 - Typical Switching Time vs. Gate Resistance
T
J
= 125 °C, V
CC
= 600 V, V
GE
= ± 15 V, I
C
= 50 A
E
on
, E
off
(mJ)
I
C
(A)
0 100 20 40 10 30 50 70 60 80 90
0
1
2
4
8
6
3
5
9
7
93418_03
10
E
on
E
off
E
on
, E
off
(mJ)
R
g
( Ω)
0 60 10 20 30 40 50
0
1
2
4
8
6
3
5
9
7
93418_04
10
E
on
E
off
V
G
E
(V)
Q
g
(μC)
0 0.2 0.4 0.5 0.1 0.3 0.6
93418_05
20
10
0
15
5
V
CC
= 600 V
V
CC
= 900 V
0.1
1
10
0
93418_06
5 15 25 10 20 30
V
CE
(V)
C (nF)
35
C
ies
C
oes
C
res
t (ns)
I
C
(A)
0 120 20 40 60 100 80
10
93418_07
1000
100
t
d(off)
t
d(on)
t
f
t
r
t (ns)
R
g
( Ω)
0 10 40 20 50 30 60
10
93418_08
1000
100
t
d(off)
t
d(on)
t
f
t
r