Vishay semiconductors, Circuit configuration – C&H Technology VS-GB50NP120N User Manual
Page 6
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VS-GB50NP120N
www.vishay.com
Vishay Semiconductors
Revision: 06-Aug-12
5
Document Number: 93418
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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www.vishay.com/doc?91000
Fig. 9 - Typical Forward Characteristics (Diode)
Fig. 10 - Transient Thermal Impedance
CIRCUIT CONFIGURATION
I
F
(A)
V
F
(V)
0
3.5
0.5
1.5
2.5
1.0
2.0
3.0
0
93418_09
100
40
30
80
20
60
90
70
10
50
125 °C
25 °C
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t
p
(s)
Z
thJC
(K/W)
93418_10
Diode
IGBT
1
6
7
3
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
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