Vishay semiconductors, Circuit configuration – C&H Technology VS-GB50NP120N User Manual

Page 6

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VS-GB50NP120N

www.vishay.com

Vishay Semiconductors

Revision: 06-Aug-12

5

Document Number: 93418

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 9 - Typical Forward Characteristics (Diode)

Fig. 10 - Transient Thermal Impedance

CIRCUIT CONFIGURATION

I

F

(A)

V

F

(V)

0

3.5

0.5

1.5

2.5

1.0

2.0

3.0

0

93418_09

100

40

30

80

20

60

90

70

10

50

125 °C

25 °C

0.0001

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

t

p

(s)

Z

thJC

(K/W)

93418_10

Diode

IGBT

1

6
7

3

2

LINKS TO RELATED DOCUMENTS

Dimensions

www.vishay.com/doc?95524

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