Vishay semiconductors – C&H Technology VS-UFL230FA60 User Manual
Page 5
VS-UFL230FA60
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Vishay Semiconductors
Revision: 03-Nov-11
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Document Number: 93635
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical I
rr
Diode vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd +Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
93635_05
0
25
50
75
100
125
150
175
0
40
80
120
160
200
240
280
DC
Square wave (D = 0.50)
80 % Rated V
R
applied
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
93635_06
0
100
200
300
400
500
0
40
80
120
160
200
240
280
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
t
rr
(ns)
dI
F
/dt (A/µs)
50
70
90
110
130
150
170
190
210
230
250
100
1000
T
J
= 125 °C
T
J
= 25 °C
93635_07
Q
rr
(nC)
dI
F
/dt (A/µs)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
100
1000
T
J
= 125 °C
T
J
= 25 °C
93635_08
I
rr
(A)
dI
F
/dt (A/μs)
93635_9
0
10
20
30
40
50
100
1000
T
J
= 125 °C
T
J
= 25 °C