C&H Technology GA200HS60S1PbF - Manual (Page 2)

Document Number: 94362 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-Apr-08 1
"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
GA200HS60S1PbF
Vishay High Power Products
FEATURES
• Generation 4 IGBT technology
• Standard speed: Optimized for hard switching
operating frequencies DC to 1 kHz
• Very low conduction losses
• Industry standard package
• Completely lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage for TIG
welding machines
PRODUCT SUMMARY
V
CES
600 V
I
C
DC 480 A
V
CE(on)
at 200 A, 25 °C 1.13 V
INT-A-PAK
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 480
A
T
C
= 116 °C 200
Pulsed collector current I
CM
800
Peak switching current I
LM
800
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation P
D
T
C
= 25 °C 830
W
T
C
= 85 °C 430
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 1 mA 600 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 200 A - 1.13 1.21
V
GE
= 15 V, I
C
= 200 A, T
J
= 125 °C - 1.08 1.18
Gate threshold voltage V
GE(th)
I
C
= 0.25 mA 3 4.5 6
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 0.025 1
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - - 10
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA