Vishay high power products – C&H Technology GA200HS60S1PbF User Manual
Page 4
Document Number: 94362
For technical questions, contact: [email protected]
www.vishay.com
Revision: 29-Apr-08
3
GA200HS60S1PbF
"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A
Vishay High Power Products
Fig. 3 - Case Temperature vs. Maximum Collector Current
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 6 - Typical Switching Losses vs. Gate Resistance
Fig. 7 - Typical Switching Losses vs.
Collector to Emitter Current
160
140
120
100
100
200
300
400
500
80
60
40
20
0
0
T
C
- Case
T
e
mperature (°C)
Maximum DC Collector Current (A)
T
J
- Junction Temperature (°C)
V
CE
-
Collector to Emitter
V
o
lta
g
e (V)
1.6
1.4
1.2
1.0
0.8
20
40
60
80
100
120
140
160
400 A
200 A
120 A
Q
G
- Total Gate Charge (nC)
0
300
600
900
1200
1500
1800
V
GE
- Gate to Emitter
V
o
lta
g
e (V)
16
14
12
10
8
6
4
2
0
Typical value
T
J
= 25 °C
V
CE
= 480 V
V
GE
= 15 V
I
C
= 200 A
E
off
typical
Freewheeling
diode 30EPH06
R
G
- Gate Resistance (
Ω)
0
10
20
30
40
50
50
40
45
35
30
25
20
Switc
hing Losses (mJ)
E
on
typical
0
10
20
30
40
50
60
70
80
E
on
typical
E
off
typical
T
J
= 125 °C
V
CE
= 480 V
V
GE
= 15 V
V
GE
= 10
Ω
Freewheeling
diode 30EPH06
50
75
100
175
200
125
150
I
C
- Collector to Emitter Current (A)
Switching Losses (mJ)
Functional Diagram
3
4, 5
6, 7
1
2
Electrical Diagram
6
7
4
5
3
1
2