C&H Technology GT100NA120U - Manual (Page 2)

1
Features
Target Data 03/09
GT100NA120U
SOT 227 TRENCH IGBT, 100 A
High Side Chopper
Vishay Semiconductor Italy
Revision: 18-Mar-09
SOT-227
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are
defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted
and still air conditions.
Benefits
• Lower conduction losses and switching losses
• Higher switching frequency up to 25 KHz
I
C(DC)
1 11 A @ 70°C
I
F(DC)
65 A @ 70°C
V
CE(on) typ
2.36 V @ 100 A, 25°C
V
CES
1200V
PRODUCT SUMMARY
T
J
Maximum operating junction temperature 150 °C
T
STG
Storage temperature range -55 to150
V
ISOL
RMS isolation voltage, Any terminal to case 2500 V t = 1min, TJ = 25°C
Diode
V
RRM
Repetitive peak reverse voltage 1200 V
I
FM
Continuous forward current 88 A T
C
= 25°C
60 T
C
= 80°C
I
FSM
Non repetitive peak surge current 400 A T
J
= 25°C, 10 ms
P
D
Maximum power dissipation 338 W T
C
= 25°C
189 T
C
= 80°C
IGBT
V
CES
Collector to Emitter Voltage 1200 V
V
GES
Gate to Emitter Voltage 20
I
CM
Pulse collector current 270 A
I
LM
Clump inductive load current 2 70 A
I
C
Continuous collector current 1 48 A T
C
= 25°C
102 T
C
= 80°C
P
D
Maximum power dissipation 521 W T
C
= 25°C
292 T
C
= 80°C
PARAMETERS VALUES UNITS CONDITIONS
ABSOLUTE MAXIMUMRATINGS
• Trench IGBT
• Very Low VCE
(ON)
• 10 μs short circuit capability
• Hexfred clamping diode
• Minimal tail current
• Tighter distribution of parameters
• Higher reliability
• Electronic Power Supplies application