C&H Technology GT100NA120U - Manual (Page 3)

GT100NA120U
Vishay Semiconductor Italy
2 Revision 18-Mar-09
R
thCS
Case-to-Sink, flat, greased surface 0.05 °C/ W
T Mounting torque (M3 screw) 1.3 Nm
Wt Weight 30 g
Diode
R
thJC
Junction-to-Case, diode thermal resistance 0.37 °C/ W
IGBT
R
thJC
Junction-to-Case, IGBT thermal resistance 0.2 4 °C/ W
PARAMETERS MIN TYP MAX UNITS
THERMAL-MECHANICAL SPECIFICATION
Clamping Diode
I
RM
Reverse leakage current 10 μA 1200V
0.5 mA 1200V, T
J
= 125°C
V
F M
Forward voltage drop 4.4 V I
C
= 100A
5.2 I
C
= 100A, T
J
= 125°C
IGBT
BV
CES
Collector to emitter breakdown volt. 1200 V V
GE
= 0V, I
C
= 500μA
ΔV
BR(CES)
/ ΔT
J
Temp. coefficient of breakdown 0.05 V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
V
CE(on)
Collector to emitter voltage 1.79 V
GE
= 15V, I
C
= 50A
2.4 V V
GE
= 15V, I
C
= 100A
2.0 V
GE
= 15V, I
C
= 50A T
J
= 125°C
2.7 V
GE
= 15V, I
C
= 100A
V
GE(th)
Gate threshold voltage 5.8 V V
CE
= V
GE
, I
C
= 500μA
ΔV
GE(th)
/ ΔT
J
Temp.coeff. of threshold voltage -30 mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
I
CES
Zero gate voltage collector current 10 μA V
GE
= 0V, V
CE
= 1200V
100 V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
I
GES
Gate to emitter leakage current ± 200 n A Lo A V
GE
= ± 20V
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
ELECTRICAL CHARACTERISTICS @ T
J
= 25°C
(unless otherwise specified)