Vishay semiconductors – C&H Technology VS-GA100TP60S User Manual
Page 2
VS-GA100TP60S
www.vishay.com
Vishay Semiconductors
Revision: 28-Nov-12
1
Document Number: 94811
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in1 Package 600 V, 100 A
FEATURES
• High short circuit capability, self limiting to 6 x I
C
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Rugged with ultrafast performance
• Latch-up free
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders at f
SW
up to 25 kHz
• SMPS (Switching mode power supplies)
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
600 V
I
C
at T
C
= 80 °C
100 A
V
CE(on)
(typical)
at I
C
= 100 A, 25 °C
1.9 V
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
130
A
T
C
= 80 °C
100
Pulsed collector current
I
CM
(1)
T
C
= 80 °C
200
Diode continuous forward current
I
F
100
Diode maximum forward current
I
FM
t
p
= 1 ms
200
Maximum power dissipation
P
D
T
J
= 150 °C
450
W
Short circuit withstand time
t
SC
T
J
= 125 °C
10
μs
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V
I
2
t value, diode
I
2
t V
R
= 0 V, t = 10 ms, T
J
= 125 °C
1250
A
2
s