C&H Technology VS-GA100TP60S - Manual (Page 3)

VS-GA100TP60S
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Vishay Semiconductors
Revision: 28-Nov-12 2 Document Number: 94811
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 600 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C - 1.9 -
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 2.3 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 1.5 mA, T
J
= 25 °C 3.5 4.5 5.5
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 300 V, I
C
= 100 A, R
g
= 2.2
,
V
GE
= ± 15 V, T
J
= 25 °C
- 28 -
ns
Rise time t
r
- 12 -
Turn-off delay time t
d(off)
- 130 -
Fall time t
f
- 20 -
Turn-on switching loss E
on
- 0.8 -
mJ
Turn-off switching loss E
off
- 2.4 -
Turn-on delay time t
d(on)
V
CC
= 300 V, I
C
= 100 A, R
g
= 2.2 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 50 -
ns
Rise time t
r
- 15 -
Turn-off delay time t
d(off)
- 150 -
Fall time t
f
- 30 -
Turn-on switching loss E
on
- 1.0 -
mJ
Turn-off switching loss E
off
- 2.9 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
- 12.8 -
nF Output capacitance C
oes
- 0.82 -
Reverse transfer capacitance C
res
- 0.18 -
SC data I
SC
t
p
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 300 V, V
CEM
 600 V - 450 - A
Stray inductance L
CE
- 30 - nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.75 - m

DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Forward voltage V
F
I
F
= 100 A
T
J
= 25 °C - 1.4 1.6
V
T
J
= 125 °C - 1.6 1.8
Reverse recovery charge Q
rr
I
F
= 100 A, V
R
= 300 V,
dI
F
/dt = 4400 A/μs
V
GE
= - 15 V
T
J
= 25 °C - 8 -
μC
T
J
= 125 °C - 14 -
Peak reverse recovery current I
rr
T
J
= 25 °C - 150 -
A
T
J
= 125 °C - 170 -
Reverse recovery energy E
rec
T
J
= 25 °C - 2.2 -
mJ
T
J
= 125 °C - 3.2 -