Vishay semiconductors – C&H Technology GA100TS120UPbF User Manual
Page 6
VS-GA100TS120UPbF
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Vishay Semiconductors
Revision: 26-Mar-12
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Document Number: 94428
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Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 11 - Typical Switching Losses vs. Collector Current
Fig. 12 - Reverse Bias SOA
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 14 - Typical Stored Charge vs. dI
F
/dt
10
20
30
40
50
R
G
- Gate Resistance (
Ω)
Total Switching Losses (mJ)
20
25
30
35
40
Total Switching Losses (mJ)
0
30
60
90
120
150
1
10
100
T
J
- Junction Temperature (°C)
I
C
= 200 A
I
C
= 100 A
I
C
= 50 A
Total Switching Losses (mJ)
I
C
- Collector Current (A)
0
50
100
150
200
0
10
20
30
40
50
60
I
C
- Collector Current (A)
0
100
200
300
0
300
600
900
1200
1500
V
CE
- Collector to Emitter Voltage (V)
Safe operating area
V
GE
= 20 V
T
J
= 125 °C
V
CE
measured at terminal (peak voltage)
1
100
10
1000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 25 °C
400
1200
1600
2000
0
4000
8000
12 000
16 000
dI
F
/dt (A/µs)
Q
rr
(nC)
V
R
= 720 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 200 A
I
F
= 100 A
I
F
= 50 A
800