C&H Technology VS-GB200TH120N - Manual (Page 5)

VS-GB200TH120N
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Vishay Semiconductors
Revision: 17-Sep-12 4 Document Number: 94763
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
I C
(A)
V
CE
(V)
0 300 900 600 1200 1500
0
200
250
300
350
400
450
100
50
150
R
g
= 5.1 Ω
V
GE
= ± 15 V
T
J
= 125 °C
I
C
, module
10 0
10 -1
10 -2
10 -3
10 -3 10 -2 10 -1 10 0 10 1
t (s)
Z
thJC
- Thermal Impedance (K/W)
IGBT
V
F
(V)
I F
(A)
0
50
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5 3
125 °C
25 °C
0
5
10
15
20
25
0 80 240 160 320 400
I
F
(A)
E
(mJ)
E
rec
V
CC
= 600 V
R
g
= 5.1 Ω
V
GE
= - 15 V
T
J
= 125 °C