C&H Technology GB50LA120UX - Manual (Page 2)

1
Features
Target Data 03/08
GB50LA120UX
SOT 227 ULTRAFAST
Low Side Chopper
Vishay Semiconductor Italy
Revision: 21-Mar-08
SOT-227
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are
defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted
and still air conditions.
Benefits
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150KHz
I
C(DC)
50A @ 88°C
I
F(DC)
50A @ 81°C
V
CE(on) typ
3.25V @ 50A, 25°C
V
CES
1200V
PRODUCT SUMMARY
T
J
Maximum operating junction temperature 150 °C
T
STG
Storage temperature range -55 to150
V
ISOL
RMS isolation voltage, Any terminal to case 2500 V t = 1min, TJ = 25°C
Diode
V
RRM
Repetitive peak reverse voltage 1200 V
I
FM
Continuous forward current 75 A T
C
= 25°C
51 T
C
= 80°C
I
FSM
Non repetitive peak surge current 400 A T
J
= 25°C, 10 ms
P
D
Maximum power dissipation 272 W T
C
= 25°C
152 T
C
= 80°C
IGBT
V
CES
Collector to Emitter Voltage 1200 V
V
GES
Gate to Emitter Voltage 20
I
CM
Pulse collector current 150 A Resistive load circuit, R = V
CC
/I
CM
I
LM
Clump inductive load current 150 A
I
C
Continuous collector current 80 A T
C
= 25°C
54 T
C
= 80°C
P
D
Maximum power dissipation 403 W T
C
= 25°C
226 T
C
= 80°C
PARAMETERS VALUES UNITS CONDITIONS
ABSOLUTE MAXIMUMRATINGS
• Positive temperature coefficient
• Lower VCE (SAT)
• Lower Parasitic Capacitance
• Minimal tail current
• Tighter distribution of parameters
• Higher reliability
• Consumer electronic Power Supplies application