C&H Technology GB50LA120UX - Manual (Page 3)

GB50LA120UX
Vishay Semiconductor Italy
2 Revision 21-Mar-08
R
thCS
Case-to-Sink, flat, greased surface 0.05 °C/ W
T Mounting torque (M3 screw) 1.3 Nm
Wt Weight 30 g
Diode
R
thJC
Junction-to-Case, diode thermal resistance 0.46 °C/ W
IGBT
R
thJC
Junction-to-Case, IGBT thermal resistance 0.31 °C/ W
I
RM
Reverse leakage current 5 μA 1200V
10 mA 1200V, T
J
= 125°C
V
F M
Forward voltage drop 2.6 V I
C
= 50A
2.7 I
C
= 50A, T
J
= 125°C
IGBT
BV
CES
Collector to emitter breakdown volt. 1200 V V
GE
= 0V, I
C
= 500μA
ΔV
BR(CES)
/ ΔT
J
Temp. coefficient of breakdown 1.5 V /°C V
GE
= 0V, I
C
= 1mA (25°C-125°C)
V
CE(on)
Collector to emitter voltage 2.5 V
GE
= 15V, I
C
= 25A
3.25 V V
GE
= 15V, I
C
= 50A
2.85 V
GE
= 15V, I
C
= 25A T
J
= 125°C
3.8 V
GE
= 15V, I
C
= 50A
V
GE(th)
Gate threshold voltage 5 V V
CE
= V
GE
, I
C
= 500μA
ΔV
GE(th)
/ ΔT
J
Temp.coeff. of threshold voltage 10 mV /°C V
CE
= V
GE
, I
C
= 1mA
I
CES
Zero gate voltage collector current 10 μA V
GE
= 0V, V
CE
= 1200V
0.6 mA V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
I
GES
Gate to emitter leakage current ± 200 nA V
GE
= ± 20V
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
PARAMETERS MIN TYP MAX UNITS
ELECTRICAL CHARACTERISTICS @ T
J
= 25°C (unless otherwise specified)
THERMAL-MECHANICAL SPECIFICATION