C&H Technology VS-SA61BA60 - Manual (Page 3)

VS-SA61BA60
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Vishay Semiconductors
Revision: 29-Feb-12 2 Document Number: 94688
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum DC output current
at case temperature
I
O
Resistive or inductive load 61 A
57 °C
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 10 ms No voltage
reapplied
Initial T
J
=
T
J
maximum
300
A
t = 8.3 ms 310
t = 10 ms 100 % V
RRM
reapplied
250
t = 8.3 ms 260
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied 442
A 2 s
t = 8.3 ms 402
t = 10 ms 100 % V
RRM
reapplied
313
t = 8.3 ms 284
Maximum I 2 t for fusing I 2 t I 2 t for time t
x
= I
2
t x t
x
0.1  t
x
 10 ms, V
RRM
= 0 V 4.4 kA 2 s
Value of threshold voltage V
F(TO)
T
J
maximum
0.914 V
Forward slope resistance r
t
10.5 m 
Maximum forward voltage drop V
FM
T
J
= 25 °C, I
FM
= 30 A
pk
t
p
= 400 μs
1.33
V T
J
= T
J
maximum, I
FM
= 30 A
pk
1.23
RMS isolation voltage base plate V
INS
f = 50 Hz, t = 1 s 3000
RECOVERY CHARACTERISTICS
PARAMETER
SYMB
OL
TEST CONDITIONS VALUES UNITS
Reverse recovery time, typical t
rr
T
J
= 25 °C, I
F
= 20 A, V
R
= 30 V,
dI
F
/dt = 100 A/μs
170
ns
T
J
= 125 °C, I
F
= 20 A, V
R
= 30 V,
dI
F
/dt = 100 A/μs
250
Reverse recovery current,
typical
I
rr
T
J
= 25 °C, I
F
= 20 A, V
R
= 30 V,
dI
F
/dt = 100 A/μs
10.5
A
T
J
= 125 °C, I
F
= 20 A, V
R
= 30 V,
dI
F
/dt = 100 A/μs
16
Reverse recovery charge,
typical
Q
rr
T
J
= 25 °C, I
F
= 20 A, V
R
= 30 V,
dI
F
/dt = 100 A/μs
900
nC
T
J
= 125 °C, I
F
= 20 A, V
R
= 30 V,
dI
F
/dt = 100 A/μs
1970
Snap factor, typical S T
J
= 25 °C 0.6 -
Junction capacitance, typical C
T
V
R
= 600 V 67 pF
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance
junction to case per bridge
R
thJC
0.30
°C/W
Typical thermal resistance,
case to heatsink per module
R
thCS
Mounting surface, smooth, flat and greased 0.05
Approximate weight 30 g
Mounting torque ± 10 % Bridge to heatsink 1.3 Nm
Case style SOT-227
I
FM
t
rr
dI
R
dt
I
RM(REC)
Q
rr
t