C&H Technology VS-SA61BA60 - Manual (Page 5)

VS-SA61BA60
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Vishay Semiconductors
Revision: 29-Feb-12 4 Document Number: 94688
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Fig. 6 - Typical Forward Voltage Drop Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical Reverse Recovery Current vs. dI
F
/dt
Z thJC
-
Thermal Impe
d
ance (°C/W)
t
p
- Square Wave Pulse Duration (μs)
0 .01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
dm
x Z
thJC
+ Tc
t rr
(ns)
dI
F
/dt (A/μs)
50
100
150
200
250
300
100 1000
I
F
= 30 A
I
F
= 20 A I
F
= 10 A
V
R
= 30 V
125 °C
25 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
125 °C
500
1000
1500
2000
2500
3000
3500
4000
100 1000
25 °C
I
F
= 30 A
I
F
= 20 A
I
F
= 10 A
V
R
= 30 V
dI
F
/dt (A/μs)
I RR
(A)
5
15
25
35
100 1000
I
F
= 30 A
I
F
= 20 A
I
F
= 10 A
V
R
= 30 V
125 °C
25 °C