Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GT400TH120N User Manual
Page 4
VS-GT400TH120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
3
Document Number: 94748
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - Switching Loss vs. P
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
-
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
0.059
K/W
Diode
-
-
0.106
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
300
g
I
C
(A)
V
CE
(V)
0
0.5
1.5
1.0
2.0
2.5
3.0
3.5
0
800
400
200
100
300
500
700
600
125 °C
25 °C
V
GE
= 15 V
I
C
(A)
V
GE
(V)
8
9
4
5
6
7
10
11
12
800
400
100
0
200
600
500
300
700
25 °C
V
CE
= 20 V
125 °C
E
on
, E
off
(mJ)
I
C
(A)
0
800
600
400
200
0
50
25
75
125
100
150
E
off
E
on
V
CC
= 600 V
R
g
= 1.8
Ω
V
GE
= ± 15 V
T
J
= 125 °C
E
on
, E
off
(mJ)
R
g
(
Ω)
0
12
18
15
9
6
3
0
80
40
120
200
160
E
on
V
CC
= 600 V
I
C
= 400 A
V
GE
= ± 15 V
T
J
= 125 °C
E
off