C&H Technology VSK.56.. Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94630
2 Revision: 05-Aug-09
VSK.41.., VSK.56.. Series
Vishay High Power Products ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I 2 t for time t
x
= I 2 √t x √t
x
(2) Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
) 2
(3) 16.7 % x
π x I
AV
< I <
π x I
AV
(4) I > π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM,
I
DRM
AT 125 °C
mA
VSK.41
VSK.56
04 400 500 400
15
06 600 700 600
08 800 900 800
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS
Maximum average on-state current (thyristors) I
T(AV) 180° conduction, half sine wave,
T
C
= 85 °C
45 60
A
Maximum average forward current (diodes) I
F(AV)
Maximum continuous RMS on-state current,
as AC switch
I
O(RMS)
100 135
Maximum peak, one-cycle non-repetitive
on-state or forward current
I
TSM
or
I
FSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
850 1200
t = 8.3 ms 890 1256
t = 10 ms 100 % V
RRM
reapplied
715 1000
t = 8.3 ms 750 1056
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied
Initial T
J
=
T
J
maximum
3.61 7.20
kA 2 s
t = 8.3 ms 3.30 6.57
t = 10 ms 100 % V
RRM
reapplied
2.56 5.10
t = 8.3 ms 2.33 4.56
Maximum I 2 √t for fusing I 2 √t (1)
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
36.1 72 kA 2 √s
Maximum value or threshold voltage V
T(TO)
(2)
Low level (3)
T
J
= T
J
maximum
1.08 0.91
V
High level (4) 1.12 1.02
Maximum value of on-state
slope resistance
r
t
(2)
Low level (3)
T
J
= T
J
maximum
4.7 4.27
m
Ω
High level (4) 4.5 3.77
Maximum peak on-state or forward voltage
V
TM
I
TM
= π x I
T(AV)
T
J
= 25 °C 1.81 1.7 V
V
FM
I
FM
= π x I
F(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
= π x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 µs, t
p
> 6 µs
150 A/µs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400 400
or
I
(RMS)
I
(RMS)