C&H Technology VSK.56.. Series - Manual (Page 4)

Document Number: 94630 For technical questions, contact: [email protected] www.vishay.com
Revision: 05-Aug-09 3
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay High Power Products
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum gate voltage required to trigger V
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum gate current required to trigger I
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
270
mA T
J
= 25 °C 150
T
J
= 125 °C 80
Maximum gate voltage that will not trigger V
GD
T
J
= 125 °C, rated V
DRM
applied 0.25 V
Maximum gate current that will not trigger I
GD
T
J
= 125 °C, rated V
DRM
applied 6 mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 125 °C, gate open circuit 15 mA
Maximum RMS insulation voltage V
INS
50 Hz
3000 (1 min)
3600 (1 s)
V
Maximum critical rate of rise of off-state voltage dV/dt T
J
= 125 °C, linear to 0.67 V
DRM
1000 V/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
- 40 to 125 °C
Maximum internal thermal resistance,
junction to case per leg
R
thJC
DC operation 0.44 0.35
°C/W
Typical thermal resistance,
case to heatsink per module
R
thCS
Mounting surface flat, smooth and greased 0.1
Mounting torque ± 10 %
to heatsink A mounting compound is recommended and the
torque should be rechecked after a period of
3 h to allow for the spread of the compound. 4
Nm
busbar 3
Approximate weight
75 g
2.7 oz.
Case style JEDEC TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.41.. 0.110 0.131 0.17 0.23 0.342 0.085 0.138 0.177 0.235 0.345
°C/W
VSK.56.. 0.088 0.104 0.134 0.184 0.273 0.07 0.111 0.143 0.189 0.275