C&H Technology GT100DA60U - Manual (Page 4)

GT100DA60U
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Vishay Semiconductors
Revision: 24-Oct-12 3 Document Number: 93185
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 175 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
V
GE
= 15 V
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
- 40 - 175 °C
Junction to case
IGBT
R
thJC
- - 0.26
°C/W Diode - - 0.73
Case to sink per module R
thCS
- 0.05 -
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight - 30 - g
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0
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20 40 60 100 140 180 80 120 160 200
0
180
160
100
120
140
20
40
60
80
I C
(A)
V
CE
(V)
1 10 100 1000
0.01
0.1
1
93185_02
1000
10
100
I C
(A)
V
CE
(V)
0 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
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300
100
200
275
75
175
250
50
150
225
25
125 T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
80 60 40 20 100 120 0
100
160
180
0
40
60
140
80
120
20
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