C&H Technology GT100DA60U - Manual (Page 5)

GT100DA60U
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Vishay Semiconductors
Revision: 24-Oct-12 4 Document Number: 93185
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Fig. 5 - Typical Diode Forward Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5 , V
GE
= 15 V
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5 , V
GE
= 15 V
I F
(A)
V
FM
(V)
0 3.0 0.5 1.0 1.5 2.0 2.5
0
93185_05
200
100
75
175
50
150
25
125
T
J
= 175 °C
T
J
= 25 °C
T
J
= 125 °C
I CE
S
(mA)
V
CES
(V)
100 600 200 300 400 500
0.00001
93185_06
10
0.1
0.01
0.001
0.0001
1
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
V
geth
(V)
I
C
(mA)
0.2 1.0 0.3 0.4 0.6 0.8 0.5 0.7 0.9
2.5
3.0
3.5
4.0
4.5
93185_07
5.0
T
J
= 25 °C
T
J
= 125 °C
V
CE
(V)
T
J
(°C)
20 180 60 100 140
1.0
1.5
2.0
93185_08
2.5
100 A
50 A
27 A
Energy (mJ)
I
C
(A)
10 30 50 90 70 110
0
93185_09
3.0
1.5
2.5
2.0
1.0
0.5 E
on
E
off
S
witching Time (ns)
I
C
(A)
0 20 60 80 100 40 120
10
93185_10
1000
100
t
d(off)
t
d(on)
t
f
t
r